AlGaN and AlGaN-Based Quantum Wells: Towards High-Power High-Frequency Electronics

Abstract

Terahertz spectroscopy is an important tool for non-contact, non-destructive characterization of materials. From the transmission and reflection properties of samples through THz time domain and continuous wave spectroscopy it is possible to extract the dielectric properties of materialssamples as well as the nanoscale transport properties of these. We have demonstrated this previously in complex oxides [1-2]. During this project, as research objective, we focused on the THz characterization of III-Nitrides through THz spectroscopy as well as explored the potentials of these materials for terahertz applications. We also developed new techniques and approaches towards materials characterization, which we employed not only in III-Nitrides, but also in other wide bandgap semiconductors.

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Document Details

Document Type
Technical Report
Publication Date
Oct 25, 2021
Accession Number
AD1153214

Entities

People

  • Berardi Sensale-Rodriguez

Organizations

  • University of Utah

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Charge Carriers
  • Communication Systems
  • Compound Semiconductors
  • Electronics Laboratories
  • Frequency Bands
  • Materials Science
  • Metal-Semiconductor Junctions
  • Metamaterials
  • Modulation
  • Power Electronics
  • Refractive Index
  • Resonant Frequency
  • Semiconductors
  • Spectroscopy
  • Terahertz Metamaterials
  • Terahertz Radiation
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing