Radiation Effects in N-face and Nonpolar m-plane III-Nitrides and Heterostructures
Abstract
The effects of gamma rays and neutrons on Ga-polar and N-polar pn-diode and Schottky diode test structures were evaluated. Across all samples and irradiations conducted, the most sensitive part of test structures was observed to be the contact to p-type layers. Differences in response to gamma rays between test structures grown on freestanding GaN vs. sapphire, which contain respectively lower and higher densities of threading dislocations, were also observed. Freestanding samples recovered nearly fully over the course of a few weeks, while no recovery was observed for the samples on sapphire. Differences in response to neutron irradiation were also observed for N-face vs Ga-face c-plane test structures.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 2021
- Accession Number
- AD1161640
Entities
People
- Azaree Lintereur
- Daniel Feezell
- Emily Mace
- Michael A. Scarpulla
Organizations
- Pacific Northwest National Laboratory
- Pennsylvania State University
- University of New Mexico
- University of Utah