Growth of Novel InAs Sources and Detectors
Abstract
There are three goals of the research in this 3-year project: 1) improve AlAsSb epitaxy latticematched to InAs substrates, 2) design and realize a short-wavelength above-bandgap quantum cascade detector (QCD), 3) design and realize a light coupling mechanism for surface-normal illumination. The InAs/AlAsSb QCD was grown lattice-matched on unintentionally doped InAs substrates with a Riber Compact 21 molecular beam epitaxy (MBE) chamber. The active region was designed using an 8-band k p-method formalism. The electron transport includes scattering mechanisms, such as longitudinal optical (LO)- and acoustic phonon scattering, interface roughness scattering, and alloy scattering. The designed wavelength is 2.7 micro m, which is in the center of a CO2 absorption band. A surface diffraction grating was simulated and fabricated to allow topside illumination of this short wavelength QCD that is additionally detecting above the bandgap energy of the InAs substrate. The electrical and optical characterization was performed in ambient conditions and in a cryostat, cooled in temperature-steps to 80 K, with a Bruker Vertex 70v Fourier-transform infrared spectrometer (FTIR) and a broadband mid-infrared (MIR) Globar source.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 13, 2022
- Accession Number
- AD1164052
Entities
People
- Aaron M. Andrews