Epitaxial Growth and Characterization of Cubic Boron Nitride

Abstract

Cubic boron nitride is a promising material for high power and high temperature electronic devices owing to its large band gap (tilde 6.4 eV) and high thermal conductivity. We report here on the growth of epitaxial films of undoped and Si-doped c-BN on diamond substrates by ion beam-assisted MBE and their characterization by scanning TEM, FTIR, XPS, AFM, and Hall effect transport measurements. In addition, we report on the role that trace amounts of Mg plays in enabling the growth of c-BN.

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Document Details

Document Type
Technical Report
Publication Date
Apr 27, 2022
Accession Number
AD1176095

Entities

People

  • Andrew C. Lang
  • Bradford B. Pate
  • David F. Storm
  • Neeraj Nepal
  • Sergey I Maximenko
  • Tatyana Feygelson

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Acids
  • Ceramic Materials
  • Chemical Vapor Deposition
  • Crystal Structure
  • Crystals
  • Electron Energy
  • Electron Microscopy
  • Epitaxial Growth
  • Films
  • High Density
  • High Temperature
  • Ion Beams
  • Materials
  • Materials Processing
  • Materials Science
  • Optical Properties
  • Optics
  • P-N Junctions
  • Physical Vapor Deposition
  • Quartz Crystal Microbalances
  • Roughness
  • Scattering
  • Spectroscopy
  • Transmission Electron Microscopy

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene