Neutron Spectral Effect on Microelectronic Device Performance
Abstract
Response of 2N2222 bipolar junction transistors to neutrons from a pulsed thermonuclear or pulsed fission source are researched. Measurements used for comparing performance included the base-collector junction current-voltage and capacitance-voltage characteristics and device gain degradation. Little change was detected in steady-state operation of the base-collector junction, but evidence in the dynamic and capacitance measurements establish effects based on environment. Experimental results are compared to literature results and parameters are explored using a device model simulation code.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 26, 2022
- Accession Number
- AD1176801
Entities
People
- Wade Kloppenburg
Organizations
- Air Force Institute of Technology