GaN Modeling and CAD
Abstract
Fundamental contributions to science: Mobility the GaN and GaAs mobility curves have previously been modelled as linear and saturated regions. Turns out there is an intermediate region that are in the physics publications but the current models have ignored or simplified. This impacts Psat vs PAE load-pull. Gradual channel approximation the traditional formulation is incorrect for pHEMTs given the quantum quantisation of the 2DEG. This effects gm slope in saturation which impacts OIP3 in GaN. Diffusion current this current traditionally ignored as small relative to majority carrier drift current. There is a substantial diffusion near pinch-off which makes a contribution to total charge and shifts the C vs V curve for the device. This has implications for envelope simulation in particular. Initial work to add nonlinear noise modelling inherent to MQFET 2.0: single model giving linear, nonlinear, and noise New Technology status partial implementation of new GaN measurement tehnology Arbitrary Pulsed Semiconductor Parameter Analyser 2.0 system assembled and software being coded1.0 - custom measurement system developed for GaAs by Macquarie with HPUpgraded for GaN long-time constant trapping
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 22, 2022
- Accession Number
- AD1178523
Entities
People
- Michael Heimlich
Organizations
- Macquarie University