WMD Radiation Effects on Vertical GaN Materials, Junctions, and Interfaces

Abstract

The project aimed to accomplish the following major activities:1) Measure photocurrent response on the impact of reduced breakdown, which provided useful constants to calculate avalanche for dose rateeffects in GaN. 2) Metal Oxide structures were characterized and packaged. 3) Simulated and correlated experimental data to prompt radiationeffects on vertical GaN P-N power diode structures. Investigated the impact of heavy ion and proton SEEs in vertical GaN device structures.

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Document Details

Document Type
Technical Report
Publication Date
Aug 10, 2022
Accession Number
AD1180104

Entities

People

  • Todd R. Weatherford

Organizations

  • Naval Postgraduate School

Tags

Communities of Interest

  • Advanced Electronics
  • Counter WMD

DTIC Thesaurus Topics

  • Abstracts
  • Availability
  • Circuit Boards
  • Classification
  • Compound Semiconductors
  • Diodes
  • Dose Rate
  • Elements
  • Experimental Data
  • Gallium Nitrides
  • Ions
  • Materials
  • Metal Oxide Semiconductors
  • Metal Oxides
  • Metals
  • Multiplication Factor
  • Oxides
  • Printed Circuits
  • Professional Development
  • Radiation
  • Radiation Effects
  • Schools
  • Schottky Diodes
  • Semiconductors
  • Simulations

Readers

  • Explosive Engineering.
  • Integrated Circuit Design and Technology.
  • Nuclear and Radiation Engineering.