Fundamental Mechanisms and Control of Dielectric Breakdown in Electronic Materials
Abstract
The physical mechanisms driving dielectric breakdown in electronic materials have assumed greater importance than ever with the emergence of semiconductors and dielectrics that can operate at extremely high voltages. While dielectric breakdown is pervasive in nature, it is critically important for the performance, reliability, and life of electronic devices operating under high applied electric bias. This work focused on (1) the fundamental mechanisms underlying dielectric breakdown in electronic materials and (2) methods for controlling these mechanisms and increasing dielectric strength in microelectronic heterostructures outlooked for high-speed, high-power devices under extremely high voltages. Both initiatives involved the measurement and control of native point defects using a combination of electron beam, optical, surface science, buried interface and plasma processing techniques. Depth-resolved cathodo-luminescence spectroscopy (DRCLS) combined with hyperspectral imaging (HSI) enabled us to determine the nature, electronic properties, densities, and spatial location of these defects on a nanometer scale and in three dimensions. We used DRCLS to characterize the optical and electronic properties, densities, and spatial movements of native point defects in the representative metal oxides ZnO, SrTiO3, and Ga2O3 single crystals, nanostructures, and device structures subject to high/extreme electric fields.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 19, 2022
- Accession Number
- AD1184948
Entities
People
- Leonard J Brillson
Organizations
- Ohio State University