The Strain-Stress Relationships for Band Gap, Phonon and Plasmon Energies in Monoclinic Ga2O3 and Related Materials
Abstract
The objectives of this proposal are to map the strain-stress relationships for eigenenergies in semiconductor materials with monoclinic symmetry. The eigenenergies of interest in this proposal are phonon mode energies, coupled phonon and free charge carrier mode energies, and band-to-band transition energies. Specifically, this proposal aims (1) to perform strain analysis in homo- and heteroepitaxial monoclinic gallium oxide and related materials, (2) to perform experimental determination of phonons, band-to-band transitions, and free charge carrier eigenmodes as a function of strain, and (3) to determine the pressure and deformation potential relationship for phonon and phonon-plasmon coupled modes, and for the band-to-band transitions in monoclinic semiconductors in gallium oxide and related materials. The approaches include the application of the generalized spectroscopic ellipsometry method from the Terahertz to the vacuum-ultraviolet spectral range, and the optical Hall effect in the THz to the Near-infrared spectral range. The approaches further include the exploitation of epitaxial strain inherent to epitaxial layer growth. Crystal growth experts and collaborators provide large sets of samples with different states of strain.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 19, 2022
- Accession Number
- AD1184963
Entities
People
- Mathias Schubert
Organizations
- University of Nebraska–Lincoln