Electro-Thermal Models of Vertical Field Effect Transistors

Abstract

We discuss in this report the final results of a research project that integrates physics-based stochastic particle-based modeling in the design, development, and optimization of field effect transistors realized with wide-gap semiconductor materials such as cubic Diamond and hexagonal GaN, including the electro-thermal characteristics of the semiconductor materials and devices of choice.

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Document Details

Document Type
Technical Report
Publication Date
Aug 16, 2022
Accession Number
AD1185111

Entities

People

  • Alvaro Latorre-rey
  • Ky Merrill
  • Marco Saraniti

Organizations

  • Arizona State University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Algorithms
  • Boltzmann Equation
  • Charge Carriers
  • Compound Semiconductors
  • Computational Science
  • Crystal Lattice Vibrations
  • Crystal Lattices
  • Differential Equations
  • Electron Mobility
  • Electronics Laboratories
  • Energy
  • Energy Transfer
  • Equations
  • Field Effect Transistors
  • Finite Element Analysis
  • Heat Transfer
  • Monte Carlo Method
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Thermal Conductivity
  • Two Dimensional

Readers

  • Computational Modeling and Simulation
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics