Epitaxial Integration of Perovskite Oxides with Scandium Aluminum Nitride

Abstract

This report presents research conducted by Dr. Eric Jin (Code 6852) during his Jerome and Isabella Karle Distinguished Scholar Fellowship from August 30, 2021 - August 29, 2022. It describes the epitaxial growth of thin film functional oxide SrCaTiO3 onto ScAlN high-electron-mobility transistor heterostructures. Structure-property relationships are investigated and the fabrication processes are optimized to maximize the resulting electrical performance of the heterostructures. This new combined materials system demonstrates heterogeneous integration of two very different material classes and paves the way for the development of novel and agile RF and power electronic components serving the needs of the Navy and Department of Defense.

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Document Details

Document Type
Technical Report
Publication Date
Nov 21, 2022
Accession Number
AD1186093

Entities

People

  • Eric N Jin

Organizations

  • United States Naval Research Laboratory

Tags

DTIC Thesaurus Topics

  • Aluminum Nitrides
  • Compound Semiconductors
  • Department Of Defense
  • Diffraction
  • Electrical Properties
  • Electron Mobility
  • Electronic Components
  • Electronics
  • Electrons
  • Epitaxial Growth
  • Films
  • High Electron Mobility Transistors
  • Materials
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Phase Diagrams
  • Phosphoric Acids
  • Power Electronics
  • Scattering
  • Semiconductors
  • Silicon Carbide
  • Thin Films

Readers

  • Integrated Circuit Design and Technology.
  • Military History
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics