Fundamental Studies of Growth and Processing of III-N-Based Deep UV Solar-Blind Back-Side-Illuminated Separate Absorption and Multiplcation

Abstract

Major Goals: This program explores the MOCVD growth and properties of materials and device structures for UV and deep-ultraviolet (DUV) solar-blind (SB) avalanche photodiodes (APDs) capable of Geiger-mode (GM) operation and fabricated in the wide-bandgap AlInGaN materials system. We are exploring many fundamental aspects related to the realization of optimized III-N DUV GM-APDs. As an overview, we have structured two Tasks in this program. Task 1: Exploration of optimized MOCVD growth conditions for III-N DUV APD heterostructures Task 2: Exploration of the impact of device design and processing of APD through comparative performance evaluation of devices.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Feb 13, 2021
Accession Number
AD1186502

Entities

People

  • Russell D. Dupuis
  • Shyh-chiang Shen
  • Theeradetch Detchprohm

Organizations

  • Georgia Tech Research Corporation

Tags

Communities of Interest

  • Advanced Electronics
  • Sensors

DTIC Thesaurus Topics

  • Avalanche Photodiodes
  • Chemical Vapor Deposition
  • Chemistry
  • Compound Semiconductors
  • Current Density
  • Detection
  • Detectors
  • Electronic Materials
  • Electronics Laboratories
  • Engineering
  • Fabrication
  • High Gain
  • Ion Implantation
  • Materials
  • Materials Science
  • Military Research
  • Optoelectronic Devices
  • Photodiodes
  • Power Electronics
  • Semiconductors
  • Vapor Deposition

Fields of Study

  • Materials science

Readers

  • Distributed Systems and Data Platform Development
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy