Spin Based Low Field Magnetoresistance as a Novel Tool for the Investigation of Radiation Effects in 3D and Vertically Integrated Microstructures

Abstract

We have extensively explored near zero field magnetoresistance (NZFMR) effects, due to spin-dependent recombination, spin-dependent charge pumping and spin-dependent trap-assisted tunneling in devices that have been irradiated or have undergone electrical stress to mimic the effects of radiation. We have correlated the amount of stress to the defect density and effects on NZFMR. In addition to Si MOSFETs we have conducted studies of amorphous hydrogenated silicon and silicon nitride films, aluminum oxide gate oxides, and SiC MOSFETs.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 2022
Accession Number
AD1186879

Entities

People

  • Michael E. Flatté
  • Patrick M. Lenahan

Organizations

  • University of Iowa

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Aluminum
  • Aluminum Oxides
  • Ceramic Materials
  • Electromagnetic Fields
  • Electromagnetic Radiation
  • Magnetoresistance
  • Oxides
  • Quantum Tunneling
  • Radiation
  • Tunneling

Readers

  • Naval Mine Countermeasure Systems Development.
  • Semiconductor Device Technology
  • Thin Film Deposition Science.