Radiation Effects in Nanoscale Electromechanical Logic Devices and Pathways Toward Robust Computing in Extreme Conditions

Abstract

The main objective is to pursue fundamental knowledge, discovery, and understanding of how radiation impact nanoelectromechanical systems (NEMS) in silicon carbide (SiC) and other wide-bandgap (WBG) materials, and to identify and quantify the radiation effects on such NEMS devices (such as resonators and switches) and their characteristics in various dynamical operations.

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Document Details

Document Type
Technical Report
Publication Date
Nov 01, 2022
Accession Number
AD1188276

Entities

People

  • Philip X-L Feng

Organizations

  • University of Florida

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Ceramic Materials
  • Compound Semiconductors
  • Crystal Lattices
  • Detection
  • Detectors
  • Electrical Measurement
  • Electromechanical Devices
  • Elements
  • Fabrication
  • Field Effect Transistors
  • Films
  • Frequency
  • Frequency Response
  • Frequency Shift
  • Ionizing Radiation
  • Mechanical Properties
  • Microelectromechanical Systems
  • Modulus Of Elasticity
  • Nanoelectromechanical Systems
  • Radiation
  • Radiation Effects
  • Semiconductors
  • Silicon Carbide

Fields of Study

  • Physics

Readers

  • Computational Fluid Dynamics (CFD)
  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics