Design and Fabrication of Plasmonic Nanoantennas for III-V Ternary Antimonide-NW Based Infrared Photodetectors with Enhanced Performance and Functionalities
Abstract
IIIV semiconductor nanowires (NWs) have been considered as building blocks for future nanoscale optoelectronic integrated circuits (OEICs). III-V ternary GaAs(1-x)Sbx NWs are desirable candidates for applications in the near-infrared range due to their high crystal quality, tunable bandgap and proven ability for monolithic integration on silicon. Recently we have successful demonstrated a series of good performance room temperature single and array GaAs(1-x)Sbx nanowire infrared photodetectors. In this project, we propose to design and implement plasmonic nanoantennas into our well-developed antimonide-NW infrared photodetectors to further enhance detector performance and functionalities. Two types of nanoantenna-nanowire structures will be designed and investigated. For the first type we will directly employ the light-focusing properties of surface plasmons generated by nanoantennas to enhance light absorption as well as to manipulate polarisation response in single nanowire photodetectors; and for the second type, we will explore the novel optical active antenna concept to extend the detector response of an array nanowires to longer wavelength. Through in-depth understanding of the fundamental light-matter interaction in the GaAsSb NW nanoantenna system, we will exploit the new degree of freedom as offered by different nanoantenna designs to develop high performance NW IR photodetectors operating at 1.3,1.55 m and beyond.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 11, 2022
- Accession Number
- AD1189103
Entities
People
- Lan Fu
Organizations
- Australian National University