Semiconductor Device Technologies for Space Applications
Abstract
The effort in the past year involved working closely with AFRL Space Vehicles Directorate to develop molecular beam epitaxy (MBE) capabilities for narrow bandgap semiconductor alloys. Alloys based on bismuth and metamorphic buffers have been explored in depth with some state-of-the-art results in both systems. A series of In AsSbBi growths with varying bismuth percentages and growth temperatures were realized. In addition to this high quality InGaAsSbBi was also realized. These alloys have been characterized using time resolved photoluminescence, cryogenic photoluminescence, X-Ray diffraction. The growths reported as some of the highest quality bismuth alloys reported to date across metrics.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 30, 2022
- Accession Number
- AD1189165
Entities
People
- Ganesh Balakrishnan
Organizations
- University of New Mexico