Physics of Failure and Radiation Effects in Emerging Electronic Materials and Devices in Space Applications
Abstract
DoD systems require access to advanced electronic technologies, but it is difficult to qualify these technologies because of limited operational data and the complexity of the failure modes. Conventional reliability quantification methods are based on accelerated testing (with the acceleration typically provided by high temperature or bias), but these methods require understanding of the physical mechanisms responsible for device degradation to ensure that the same mechanisms are responsible for limiting the lifetime under both accelerated and normal operating conditions. Understanding the physics of failure in emerging technologies is thus a necessary condition for the deployment of these technologies in future DoD systems. This program conducted work to understand the physics of failure for emerging electronic technologies of particular significance to the DoD, with a focus on applications in a space environment. The specific technical areas we focused on are: (1) radiation effects in highspeed devices and technologies and (2) reliability of GaN-based high electron mobility transistors (HEMTs).
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 17, 2022
- Accession Number
- AD1190035
Entities
People
- Ronald D. Schrimpf
Organizations
- Vanderbilt University