Weyl Fermion Devices for Chipscale Communications
Abstract
During the fourth year of this research program, investigations continued on multiterminal devices fabricated from semimetals with near-zero energy bandgap to study the possibility of Weyl fermion-effects on their operation and performance. With their exotic, topologically protected properties, Weyl fermion devices may produce electronic and optical circuits with ultra-high speeds and ultra-low power (dissipationless) drain, with operation at far-infrared wavelengths. Work continued on the Weyl semimetals MoTe2 and WTe2, as well as on low energy bandgap GeSn alloys, which were hoped to have Weyl-like behavior. The infrared photo response of multi-terminal devices was measured at wavelengths near 10 micrometers. It was found that these devices had interesting polarization-dependent photo response and could distinguish the incident polarization including circular from horizontal and vertical linear polarization.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 30, 2022
- Accession Number
- AD1190040
Entities
People
- J. Kolodzey
Organizations
- University of Delaware