Depth-Dependent Transient and Permanent Materials Modification Arising from Ultrafast Laser Induced Carrier and Phonon Excitations
Abstract
We propose to initiate a novel approach to studies of ultrafast laser induced high density carrier excitations in semiconductors. This research direction provides a path leading to highly localized transient as well as in some cases, permanent materials modification at an arbitrary depth. Exploring these ultrafast dynamical phenomena at the quantum level is critical for further advances in modern nanoscience. The proposed approach to laser oriented materials science goes beyond traditional investigations of optical properties and provides the means to characterize and manipulate matter in a spatially and temporally localized manner with nanometer scale accuracy far from equilibrium. Material modifications are created by localized high density excited carriers arising from a coupling between photons and coherent acoustic phonons (CAP).
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 22, 2021
- Accession Number
- AD1196758
Entities
People
- Norman H. Tolk
Organizations
- Vanderbilt University