A Versatile New Architecture for High-Coherence, Chip-Scale Photonics
Abstract
Project goals: The primary goal of this effort was the demonstration of electrically driven, semiconductor-based (i.e. III-V) gain, directly integrated on Silicon Nitride (SiN) Direct in the above refers to the absence of any third, intermediary material (e.g. Silicon) facilitating the optical interfacing of III-V and SiN.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 07, 2022
- Accession Number
- AD1197123
Entities
People
- Amnon Yariv
Organizations
- California Institute of Technology