A V-Band Downconversion Mixer in 90 nm GaN

Abstract

This paper presents a V-band downconversion mixer in 90 nm Gallium Nitride (GaN). This mixer uses low-side local oscillator (LO) injection to downconvert 50-61 GHz radiofrequency (RF) signals to a 12.8 GHz intermediate frequency (IF).The LO input requires a 7 dBm sinusoidal drive, and a single-balanced LO topology is implemented to improve the mixer's LO rejection. A novel Wilkinson-based LO to RF leakage cancellation circuit is implemented to provide a 22 dB isolation improvement at the mixers RF input. A peak conversion gain of 12.6 dB and an average conversion gain of 5.3 dB is achieved. The average noise figure (NF) is 10.1 dB and output third-order intercept (OIP3) is 15.1 dBm. The mixer uses a 15 V drain supply and consumes 0.51 W. The design is currently being fabricated, with test results expected in late 2023.

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Document Details

Document Type
Technical Report
Publication Date
Mar 20, 2023
Accession Number
AD1198409

Entities

People

  • Ali Darwish
  • Khamsouk Kingkeo
  • Matthew Larue
  • Sami Hawasli

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amplifiers
  • Compound Semiconductors
  • Conversion
  • Frequency
  • Frequency Bands
  • Gain
  • Gallium
  • Gallium Arsenides
  • Gallium Nitrides
  • Insertion Loss
  • Intermediate Frequencies
  • Local Oscillators
  • Losses
  • Noise
  • Radio Frequency
  • Radio Frequency Amplifiers
  • V Band

Readers

  • Electronics Engineering
  • Optical Physics and Photonics.

Technology Areas

  • Microelectronics