Final Report: Phononic Effects in Diamond Electronics
Abstract
The goal of this effort with Army Research Laboratory was to overcome some of the limitations in the development of diamond-based nanoelectronic components associated with stable doping, defects and fabrication issues and lower carrier mobility. The theoretical effort focuses on understanding the effects of 2D phonons both optical and acoustic phonon scattering is modified because the carriers in these transistors are 2D holes produced by surface transfer doping. During the period of the grant the theoretical thrust of this effort has been on the formulation of the effects of the remote polar phonons and the contribution of the effects of the surface acoustic phonons on the scattering rates and thus on the mobility of these transistors. In parallel we are also fabricating the devices experimentally and discussing and comparing these fabricated devices with the ones that are being fabricated at ARL After the end of the second year, there was no further funding unfortunately due to cuts at ARL. However the grant has inspired a search for better materials systems for the capping layer for lower phonon scattering and thus higher mobilities and work on c-BN as the surface layer was completed and published before the end of the grant. In addition we also looked at fabrication of liquid ion gate transistors in collaboration with Argonne National Lab and that work too was published during the period of the grant.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 22, 2022
- Accession Number
- AD1199429
Entities
People
- Mitra Dutta
Organizations
- University of Chicago