Intentional Iron Diffusion in Beta-Ga2O3

Abstract

This report details efforts to selectively dope Beta-Ga2O3. Doping was achieved through diffusion source layers containing Mg, Fe, Sn, and indium. SIMS analysis is presented to show the depth of diffusion of the different species. Experiments showed that diffusion is a viable method to selectively dope gallium oxide.

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Document Details

Document Type
Technical Report
Publication Date
Feb 05, 2019
Accession Number
AD1204249

Entities

People

  • J. Neil Merrett
  • Jacob Lawson
  • Kevin Bray

Organizations

  • Air Force Research Laboratory
  • University of Dayton

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Air Force
  • Air Force Facilities
  • Air Force Research Laboratories
  • Buildings And Structures
  • Contracts
  • Diffusion
  • Government Procurement
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  • Information Exchange
  • Military Research
  • Procurement
  • Specifications
  • Standards
  • Technical Information Centers
  • Thermal Diffusion
  • United States
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Fields of Study

  • Materials science

Readers

  • Analytical Chemistry
  • Materials Science and Engineering.
  • Polymer Science and Technology

Technology Areas

  • Microelectronics