Damage Assessment of InGaP-based Power Devices Exposed to Simulated Alpha Radiation

Abstract

The effects of radiation damage on an indium gallium phosphide (InGaP) beta-voltaic PIN diode and a zinc sulfide/InGaP beta-photovoltaic structure were evaluated by exposing both materials to a beam of 4.5-MeV helium ions as a surrogate for exposure to alpha particles. These measured results will influence the choice of semiconductor and phosphor materials for use in long-lived radioisotope power sources.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 2023
Accession Number
AD1208248

Entities

People

  • John D. Demaree
  • Leighann Larkin
  • Marc S. Litz
  • Michael Restaino
  • Michael Wraback
  • Muhammad R. Khan
  • Nicholas P. Barbieri
  • Vijay Parameshwaran

Organizations

  • United States Army Research Laboratory

Tags

Fields of Study

  • Physics

Readers

  • Electrical Engineering
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics