Optimization of Light Extraction From High-Voltage SiC PiN Diode Via Package Design

Abstract

This work demonstrates improving light extraction from a silicon carbide (SiC) PiN diode via package optimization. Previous research has shown that SiC power devices have low on-state voltage drop while maintaining a large breakdown voltage, making them desirable for high-power systems. SiC produces insufficient amounts of electroluminescence due to being an indirect bandgap semiconductor. Device packaging utilizing ray optics can maximize electroluminescent output. A packaging model is developed using computer aided design (CAD) software that supports light production and high-power operation with associated heat and electric potential constraints. The packaged SiC PiN diode is shown to have a light extraction improvement of 1740 percent. Methods of device production and follow-on testing are also discussed.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 2023
Accession Number
AD1212938

Entities

People

  • John K. Ii Martin

Organizations

  • Naval Postgraduate School

Tags

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Compound Semiconductors
  • Computer-Aided Design
  • Electric Fields
  • Electromagnetic Fields
  • Electronics Laboratories
  • Energy Bands
  • Modules (Electronics)
  • Optics
  • P-N Junctions
  • Power Electronics
  • Refractive Index
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Voltage

Fields of Study

  • Engineering

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Microelectromechanical Systems