Electronic Structure of Ultra-Wide Bandgap Semiconductor Surfaces and Interfaces
Abstract
Experimental capabilities were developed that can directly probe the interface region in ultra-wide bandgap (UWBG) heterostructures and thereby provide fundamental information about the interface electronic properties (e.g., barrier height, band offset) that are critical to electronic device performance. These capabilities are based on a new custom light source that can be tuned across an extremely broad spectral range (NIR to DUV), thereby enabling the use of internal photoemission and other threshold photoexcitation techniques to probe the interface, surface, and bulk electronic structure in UWBG materials. By using these techniques in combination with a surface analysis system that provides complementary chemical and lattice structure information, systematic studies can be used to gain a better understanding of epitaxial UWBG materials and device structures under development. Ultimately, this research can provide a scientific foundation to guide the design and fabrication of high-power electronic device technology based on next-generation UWBG materials that is of critical importance to the Navy.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 30, 2023
- Accession Number
- AD1215837
Entities
People
- D. Scott Katzer
- David F. Storm
- Joan E. Yater
- Neeraj Neepal
Organizations
- United States Naval Research Laboratory