Silicon as a Far Infrared Detector

Abstract

Infrared detectors having short time-constants and low equivalent-noise input values (ENI) are needed in various military applications for the detection of low-intensity radiation in the region of 8 to 12 microns. For such applications, photoconductors as quantum detectors would be preferable to thermocouples and other thermal elements since they generally have considerably greater sensitivity and much shorter time constants. The spectral response of previously available photoconductors does not, however, extend beyond 6 microns, the long-wavelength limit of lead telluride (PbTe) at liquid hydrogen temperatures. A search for suitable materials which are photoconductive beyond 6 microns was therefore undertaken at this Laboratory.

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Document Details

Document Type
Technical Report
Publication Date
Apr 04, 1952
Accession Number
AD1215991

Entities

People

  • E. Burstein
  • J. J. Oberly
  • J. W. Davisson

Organizations

  • United States Naval Research Laboratory

Tags

DTIC Thesaurus Topics

  • Absorption Coefficients
  • Background Radiation
  • Band Theory Of Solids
  • Charge Carriers
  • Chemistry
  • Conduction Bands
  • Detectors
  • Dielectric Permittivity
  • Electrical Conductivity
  • Energy Bands
  • Energy Gaps
  • Free Electrons
  • Materials
  • Measurement
  • Optical Properties
  • Photoconductivity
  • Semiconductors

Fields of Study

  • Physics

Readers

  • Adaptive Control and Estimation with Uncertainty in Dynamic Systems.
  • Semiconductor Device Technology
  • Thermal Physics or Thermal Science.

Technology Areas

  • Quantum Computing