All Group IV Photodetector (graphene/oxide/GeSn film)
Abstract
Photodetectors are key devices in optoelectronic systems used in our daily life. Recently, hybrid PDs made using graphene on semiconductor outperformed their graphene and semiconductor PD counterparts, making them a potential candidate for high-performance optoelectronic systems. In this project, two new finding are demonstrated with characteristic of both amplified and attenuated photocurrent (which measures the characteristic of responsivity). This is achieved by operating the PD with back-gated bias using a new designed structure. These results provide a direct impact to the all group IV photonic as well as paving the way to the monolithic integration of optic and electronic devices in a single chip.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 2023
- Accession Number
- AD1216461
Entities
People
- Hung H. Cheng
Organizations
- National Taiwan University