Lattice-Matched Epitaxial 3-N / M2AN Alloy Heterostructures
Abstract
This report presents a summary of the findings for the U. S. Naval Research Laboratory 6.1 basic research program Work Unit 1L59/991L59 on Lattice-Matched Epitaxial III-N / M2AN Alloy Heterostructures. Substantial progress was made in the molecular-beam epitaxial (MBE) growth of transition metal nitride (TMN) thin films of TiN, NbN, and TaN, as well as growth of Ti2AlN and Ta2AlN M2AN alloy materials. Greater understanding of the substrate temperature rise induced during growth of low emissivity metals on high emissivity substrates like sapphire and SiC was developed, along with new engineered absorbing layers to increase the radiative thermal coupling between the substrate heater and the substrate. New reproducible techniques were created to grow metal-polar III-N films on top of TMN films overcoming the natural tendency for III-N films to be N-polar on TMNs. The results in this program contributed several presentations at scientific meetings, publications in scientific journals, and to follow-on 6.1 and 6.2 research programs inside of NRL as well as ongoing and new externally funded research efforts.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 12, 2024
- Accession Number
- AD1218911
Entities
People
- Douglas S. Katzer
- Matthew T. Hardy
- Neeraj Nepal
Organizations
- United States Naval Research Laboratory