Ultrawide Bandgap Gallium Oxide Power Switch

Abstract

This report presents research conducted by the Naval Research Laboratory, Code 6881, on increased power levels in Ga2O3 power switching devices by developing advanced lateral thermally managed, enhancement mode, p-type heterojunction gate (AlxGa1-x)2O3/Ga2O3 heterojunction field effect transistor (HFET), leading to an improved breakdown voltage (2 kV) and DC power (10 kW) at 1 MHz switching frequency. The effective thermal conductivity of the device will be enhanced via plasma-activated wafer bonding to a high thermal conductivity SiC substrate, mitigating self-heating effects in the device by creating a thin Ga2O3/SiC device platform.

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Document Details

Document Type
Technical Report
Publication Date
Jan 22, 2024
Accession Number
AD1219707

Entities

People

  • Andrew D. Koehler
  • James C. Culbertson
  • Marko J. Tadjer
  • Michael A. Mastro
  • Tatyana Feygelson

Organizations

  • United States Naval Research Laboratory

Tags

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Plasma Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics