A Study of GaAs1-xSbx Axial Configured Nanowires Based Schottky and p-i-n Ensemble Near-Infrared Photodetectors
Abstract
GaAsSb is a material of choice for implementing p-i-n junction in nanowire (NW) configuration due to their high intrinsic carrier mobility, direct bandgap, and bandgap tunability encompassing the low loss telecommunication near-infrared wavelength region. Further, presence of only a single group III element in this material system offers several advantages for the grow thin a nanowire geometry. Devices in one-dimensional architecture are preferred over their thin-film counterparts due to their ability to heterogeneously integrate with silicon technology, improved photo absorption, material quality, and device performance. Moreover, advantages of the NW configuration and the p-i-n junction blend perfectly in the axial p-i-n NWs, broadening their scope of applications in light detection and ranging (LIDAR) technology used in autonomous vehicles, optical interconnects, and 5G communication. However, the fabrication of ensemble NW photodetector (PD) utilizing the axial p-i-n NWs has been limited, as they suffer from severe growth challenges.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 03, 2022
- Accession Number
- AD1223743
Entities
People
- Shisir Devkota
Organizations
- North Carolina Agricultural and Technical State University