GaAsSb/GaAs Ensemble Axial Nanowire Configured Avalanche Near-Infrared Photodetectors
Abstract
Avalanche photodetectors (APDs) are essential components in commercial, military, and research applications ranging from optical communication to single-photon detection. Their inherent advantage of increased photocurrent gain and high sensitivity make them ideal candidates for low-photon flux detection compared to conventional photodetectors. In the near-infrared (NIR)regime, planar III-V APDs represent the current state-of-the-art. However, the challenges associated with their growth incompatibility on Si substrates, device scaling, high-voltage operation, and requirement of external quenching circuit have motivated the search for exploring alternative APD architectures. The one-dimensional nanowire (NW) architecture offers a promising pathway towards addressing the above issues, and hence this research attempts to take advantage of this platform to achieve high-performance state-of-the-art III-V APDs operating in the NIR spectrum.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 02, 2022
- Accession Number
- AD1223744
Entities
People
- Mehul Parakh
Organizations
- North Carolina Agricultural and Technical State University