A Study on GaAs/GaAsSbN Schottky and GaAs/GaAsSb Core Shell Avalanche Nanowire Near-Infrared Photodetectors via Molecular Beam Epitaxy
Abstract
III-V semiconductor nanowire-based infrared photodetectors are the critical components of next generation devices for quantum information science and photonic integrated circuit due to their small size, low power, high sensitivity, and speed. The ability to achieve effective strain relaxation without creating extended defects allows interesting heteroepitaxial growths and novel NW configuration structures. This work intends to leap the reliable NW-based device demonstration in two material systems, namely GaAsSbN and GaAsSb/GaAs on Si in respective Schottky and avalanche photodetector device configurations. Schottky photodetectors have a low forward voltage drop and swift switching action and are attractive for technologies such as focal planar arrays and image sensors. Avalanche photodetectors (APDs) are highly desired in next-generation optical transmission systems, computing systems, and other weak light signal devices requiring high-speed, low-cost, low-power, and sensitivity. The first part of this work will discuss the NW growth optimization and device performance aspects of dilute nitride GaAsSbN NWs in axial configuration. Multiple strategies are adopted to address the challenge of device demonstration in dilute nitride NWs, namely (i) investigating N incorporation to improve optical and morphological properties, (ii) suppressing defects and inhomogeneities, and (iii) resolving the challenge of large-scale implementation and bandgap tuning using patterned growth. The underlying difficulties for NW growth and approaches for overcoming them in achieving improved quality material growth are presented. A study of n-type doping incorporation using GaTe captive source and device performance aspects of these NWs have been investigated, and finally, a study on the patterned growth of these NWs is presented.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 15, 2022
- Accession Number
- AD1223745
Entities
People
- Rabin Pokharel
Organizations
- North Carolina Agricultural and Technical State University