Final Report: Extended-Wavelength Hot-Carrier Photodetectors From GaAs, Si to InAs/GaSb Type-II Structures (d. Research Area 4.3 Electronic Sensing ARO)

Abstract

The proposed aims were to (1) design and (2) develop infrared photodetectors with lower dark current compared to conventional photodetectors with similar wavelength thresholds. In general, both the dark current and the photoresponse threshold are governed by the value of Delta (activation energy). Here, we propose to develop detectors where the dark current corresponds to a Delta, of a shorter wavelength detector, while the photoresponse threshold corresponds to an energy value Delta' (where Delta '< Delta ) giving a longer wavelength threshold.

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Document Details

Document Type
Technical Report
Publication Date
Nov 04, 2022
Accession Number
AD1225959

Entities

People

  • Unil A. Perera

Organizations

  • Georgia State University

Tags

Readers

  • Materials Science (Mechanical Engineering).
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics