Electrically Injected 280 nm AlGaN Nanowire Edge-Emitting Lasers

Abstract

Mid and deep ultraviolet (UV) light sources, including light emitting diodes (LEDs) and laser are required for many demanding applications ranging from materials processing, surface treatment, chemical and biological analysis to water purification and disinfection. To date, however, there have been no demonstrations ofelectrically injected AlGaN quantum well lasers with operation wavelengths less than 330 nm. The poor performance of deep UV optoelectronic devices is directly related to the presence of large densities of dislocations(typically in the range of 108 cm-2, or higher), strong polarization field and the related quantum-confined Stark effect, and extremely poor p-type conductivity of AlN and AlGaN (hole concentration in AlN typically limited to ~1013 cm-3, or less).

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Sep 05, 2022
Accession Number
AD1226273

Entities

People

  • Zetian Mi

Organizations

  • University of Michigan

Tags

Fields of Study

  • Materials science

Readers

  • Optical Physics and Photonics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Quantum Computing