Virtual Substrate Simulation
Abstract
The goal of the proposed program is to use appropriate numerical simulation approaches to understand the physical mechanisms that control the growth of InGaSb (InGaAlSb) graded layers, for a specific lattice constant, and make them suitable for growth of high quality SLs, and for alloy architectures. Specifically, we are interested in determining if there is an optimum grading profile that leads to a minimum areal dislocation density at the surface of the graded layer that constitute the virtual substrate.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 29, 2023
- Accession Number
- AD1226799
Entities
People
- Dmitry Bedrov
- E. Bellotti
- Tania M. Paskova
Organizations
- Boston University