Energy-Efficient Sub-5-nm Magnetic Tunneling Junctions
Abstract
Spintronic/nanomagnetic nanotechnologies are widely considered as a promising alternative to the semiconductor microprocessor and memory technologies, which are currently facing fundamental limitations in scaling and power consumption. Such devices have advantages of non-volatility in both logic and memory, ultra-low power consumption, radiation hardness, and capability for 3D integration with significantly improved thermal management. However, despite all these advantages, many promising theoretical predictions for these devices have never been realized because of the difficulty to build and test such small devices. For the same reason, the physics in this size has not been fully understood and exploited. In the sub-5-nm size range, device properties become driven by laws of quantum mechanics. The spin excitations lifespan significantly increases, which in turn due to the nanoresulting dramatically increased spin accumulation and other quantum-mechanical effects, could lead to anomalous magnetotransport effects even at room temperature. Understanding the underlying physics in this size range is crucial for discovering and building next generation spintronic devices. Therefore, the main goal of this project is to use non-traditional nanofabrication approaches to study the new physics and build such small devices which could effectively leverage the advantageous spintronic properties.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 22, 2024
- Accession Number
- AD1230650
Entities
People
- Osama Mohammed
Organizations
- Florida International University