Lasing in 2D Group IV Nanomaterials

Abstract

Reports of lasing in Group IV semiconductors have required high optical pumping energies due to a preference for non-radiative charge carrier recombination pathways.We proposed a completely different approach using 2D Group IV materials that have direct band gaps and have demonstrated strong light emission. Thus, these materials are expected to exhibit low lasing thresholds. This will be highly important to the broad scientific community and advance the chemistry of materials that can benefit DoD capabilities in communication, surveillance, and computing. In the second year of this project, our research group has made progress in understanding structure-property relationships in 2D Group IV semiconductors that can become the basis of future optoelectronic devices. In the final year of this project,we report two major findings: (1) the synthesis of GeSn nanosheets with 50 at percent Sn and mid-infrared absorbance, and (2) demonstrating optical gain in Si nanosheets by using surface chemistry to engineer their band structures.

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Document Details

Document Type
Technical Report
Publication Date
Nov 30, 2023
Accession Number
AD1230883

Entities

People

  • Matthew G. Panthani

Organizations

  • Iowa State University

Tags

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics