Investigation of Electron Transport in B-(AI, Ga)203 Thin Films and Heterostructures Under Applied High Pressures
Abstract
All samples were grown in a RIBER 32 hybrid MBE system equipped with conventional Ga and Ge thermal effusion cells. The oxygen source consisted of ultra-high purified oxygen (>99.999%) and was activated by the RIBER RF-O 50/63 oxygen RF plasma source. A plasma power and oxygen flow rate of 410W and 2sccm,respectively, and a Ga flux of 10-8 Torr were used for all the growths presented here, corresponding to a growth rate of 110nm/h. Diluted disilane was supplied via a custom-built gas delivery system. Disilane was diluted by N2 gas. Two different disilane concentrations were used in our studies, including 0.01wt% and 10wt%. The gas delivery system included an APtech 1410T pressure regulator with two Swagelok PGU-50-P300-L-4FSF ultrahigh-purity pressure gauges, a calibrated Bronkhorst MFC ,and a customized three-way pneumatic valve, consisted of two normally closed pneumatic valves AP tech AP3540s and AP4540s. Qdisilane was controlled by MFC. The flow rate range for 0.01wt% and 10 wt% disilane was 0-0.705 sccm and 0-0.588 sccm, respectively. In the idle state, the disilane valve was closed, the output pressure was set to zero by the pressure regulator, and the three-way valve was set to off-state. A schematic of our hybrid MBE system is shown in figure 1.1 (Ge cell is not shown to save space).
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 12, 2023
- Accession Number
- AD1231158
Entities
People
- Elaheh Ahmadi
Organizations
- Board of Regents of the University of Michigan