Framework for Novel Compute (FRANC) Advanced Magnetic Tunnel Junctions (MTJs) For Computation In And Near Random Access Memory
Abstract
This effort theoretically and experimentally studied advanced magnetic tunnel junctions (MTJ) using new classes of magnetic materials, i.e. Weyl semimetals. The effort evaluated theoretically the potential for ultrahigh (~104%) tunnel magnetoresistance (TMR) in Weyl semimetal MTJs. Fabrication of MTJs with advanced materials, structures, and a novel switching mechanism, resulted in successful demonstration of magneto-crystalline perpendicular magnetic anisotropy (PMA) MTJs with a TMR of 65% and an ultralow switching current density down to1.1x105 A/cm2, which is approximately 10x smaller than the current state-of-the-art (SOTA) results. In addition, by using a multi-interface free layer (MIFL) method, a strong PMA was achieved and up to 212% TMR with the mainstream CoFeB-MgO materials system and 100 ps switching delay, 260% TMR ratio, and 0.02 fJ switching energy (equivalent, projected to 10 nm), and MTJ size of 100 nm. The concept and unique features of computational random-access memory (CRAM) was developed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 08, 2024
- Accession Number
- AD1231366
Entities
People
- Brian Hoskings
- Daniel B Gopman
- Jing-ping Wang
- Tony Low
- Weigang Wang
- William Taylor
Organizations
- GlobalFoundries
- University of Arizona
- University of Minnesota