In(x)Ga(1-x)As 1.06-micrometer Injection Lasers.
Abstract
Electroluminescent junctions of In(x)Ga(1-x)As for 1.06-micrometer laser diode evaluation have been prepared by vapor-phase and liquid-phase epitaxial growth techniques. Their performance is reported. A comparison of In(x)Ga(1-x)As epitaxial layers (0 < x < 0.25) prepared by LPE and VPE has shown that the liquid-phase material has significantly higher dislocation densities than the vapor-grown layers. Dislocation densities, minority-carrier diffusion lengths, and electroluminescence efficiencies are discussed. The operating life of the In(x)Ga(1-x)As p-n junctions has been found to be significantly higher than that of comparably prepared GaAs junctions. The improved resistance to gradual degradation with increasing InAs content is tentatively attributed to reduced junction emission energy and to the existence of a 'phonon-kick' degradation model. (Modified author abstract)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1974
- Accession Number
- ADA000382
Entities
People
- C. J. Nuese
- M. Ettenberg
Organizations
- RCA Corporation