Photo Emission from a Silicon P-N Junction.

Abstract

Light emitting diode technology can be applied to lightweight radar display equipment. Use of this technology requires an understanding of the diode types, light output, and current drain. Broad area silicon P-N junction diodes were operated under reverse biased conditions in the avalanche region. The light spots, or microplasms, that developed were observed and the relationship of the diode light intensity to the diode current was determined. Microplasm breakdown on the P-N junction during avalanche occurs at randomly positioned breakdown sites and the thresholds for microplasm ignition differ from site to site. The electric field required for microplasm appearance are greater than 120 kV/cm. (Author)

Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1971
Accession Number
ADA000794

Entities

People

  • Richard V. Bertolini

Organizations

  • United States Army Communications-Electronics Command

Tags

DTIC Thesaurus Topics

  • Diodes
  • Electric Fields
  • Electronic Components
  • Electronic Equipment
  • Electronics
  • Emission
  • Ignition
  • Intensity
  • Light Emitting Diodes
  • Lightweight
  • Modules (Electronics)
  • P-N Junction Diodes
  • P-N Junctions
  • Semiconductor Devices
  • Solid State Electronics

Readers

  • Atmospheric Remote Sensing.
  • Electrical Engineering
  • Vision Science/Vision Psychology/Cognitive Neuroscience.