Photoluminescent Properties of GaAs(1-x)P(x) Implanted with Nitrogen and Neon.
Abstract
Low temperature photoluminescence from GaAs(1-x)P(x) crystals implanted with nitrogen and neon has been studied. The implanted nitrogen produced photoluminescence spectra confirming the presence of the nitrogen isoelectronic trap after appropriate annealing. Implanted neon did not produce luminescent centers. Both nitrogen and neon implantations introduced lattice damage which severely degraded photoluminescence efficiencies prior to annealing. High temperature annealing was required to remove the effects of the implantation damage and produce optical activity of the implanted nitrogen atoms. In crystals with compositions in the direct bandgap region, certain implanted nitrogen concentrations produced more efficient luminescence than nonimplanted, N-free crystals. In addition, nitrogen concentrations greater than solid solubility were realized, as determined by the spectral characteristics of the photoluminescence. In crystals with indirect bandgap compositions, luminescence from nitrogen implanted crystals compared favorably in intensity with crystals doped conventionally with nitrogen.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1974
- Accession Number
- ADA000906
Entities
People
- Richard Ernest Anderson
Organizations
- University of Illinois Urbana–Champaign