Permanent Ionizing Radiation Effects in Gate and Isolation Dielectrics in FETs,
Abstract
The permanent ionizing radiation effects resulting from the use of dielectrics (including sapphire) to bound FET structures have been experimentally determined for a total ionizing dose up to 10 to the 8th power rads (Si). Radiation-induced positive charge trapping occurs in the isolation dielectrics which causes leakage currents to flow in n-channel enhancement mode MOSFET's fabricated in SOS. Experimental junction FET's were fabricated so that the effect of the radiation-induced charge trapping in the isolation dielectrics could be determined by measuring the JFET parameters.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 16, 1974
- Accession Number
- ADA001626
Entities
People
- Bobby L. Buchanan
- Donald A. Neamen
- Walter M. Shedd
Organizations
- Air Force Cambridge Research Laboratories