Radiation Hardened CMOS,

Abstract

The status and methods of qualifying radiation hardened CMOS on bulk and on SOS is presented and the remaining hardening problems, such as radiation-induced photoconductivity in the sapphire substrate, are put in perspective. In addition to new radiation effects data on numerous hardened gate insulators, new radiation effects and problem areas relating to gate electrodes and substrate dielectrics are presented.

Document Details

Document Type
Technical Report
Publication Date
Oct 16, 1974
Accession Number
ADA001627

Entities

People

  • Bobby Buchanan
  • Donald A. Neamen
  • Sven A. Roosild
  • Walter Shedd

Organizations

  • Air Force Cambridge Research Laboratories

Tags

DTIC Thesaurus Topics

  • Dielectrics
  • Electrodes
  • Electromagnetic Radiation
  • Governments
  • Hardening
  • Microcircuits
  • Photoconductivity
  • Radiation
  • Radiation Effects
  • Sapphire
  • Substrates

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Nuclear and Radiation Engineering.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene