Infrared Devices Related to Continuously Voltage Tuneable Line Absorption in Surface Quantization.
Abstract
The aim of this research has been to refine the physics associated with the energy levels involved at the interface between silicon and silicon dioxide as exemplified in an n-channel MOSFET structure. Demonstration of the photoresistive response of devices to radiation resonant with energy levels in the inversion layer has allowed characterization of a voltage tuneable infrared detector-spectrometer. Operating at 4.2K, typical devices have continuous tuneability from 8 mev (about 150 micrometers) to 30 mev (about 40 micrometers), a band width of approximately 1 mev, a response time of 0.00025 seconds and a noise equivalent power (NEP) of approximately 10 to the -11th power watts. Outlines for methods of improvement in terms of band range, band width and noise equivalent power have been obtained.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 31, 1974
- Accession Number
- ADA001941
Entities
People
- Robert G. Wheeler
Organizations
- Yale University