The Physics of Interface Interactions Related to Reliability of Future Electronics Devices

Abstract

Contents: The reliability of semiconductor-insulator interfaces-- Photon induced dielectric breakdown in SiO2, and Photon assisted tunneling in internal photoemission I. theory; Band structure and switching in metal oxide insulators--Electronic contact barriers and morphology of Nb2O5 thin films, and Electronic structure of the SiO2:Si3N4 interface; Instabilities associated with metal-glass interaction--Surface reactions on MOS structures, Densification of SiO2 by exposure to an ion beam, and Epitaxial growth of Nickel Silicide NiSi2 on Silicon.

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Document Details

Document Type
Technical Report
Publication Date
Jan 31, 1974
Accession Number
ADA001977

Entities

People

  • King-ning Tu
  • Thomas H. Distefano

Organizations

  • IBM Thomas J. Watson Research Center

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Band Structures
  • Crystal Structure
  • Crystals
  • Diffraction
  • Electron Diffraction
  • Electrons
  • Energy Bands
  • Epitaxial Growth
  • Heat Treatment
  • Ionizing Radiation
  • Materials
  • Materials Processing
  • Measurement
  • Scattering
  • Semiconductors
  • Thin Films

Fields of Study

  • Physics

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene