A Distribution Feedback GaAs Homojunction Injection Laser,
Abstract
The authors reported the first observation of distributed feedback lasing in a pulsed homojunction GaAs injection laser. Feedback was achieved via a third order grating structure which was ion machined in the top surface of the p-type layer. Laser action was observed at 8420 A and 8459 A corresponding to grating periodicities of 3548 A and 3572 A, respectively. Threshold current densities at 77K were observed to be as low as approximately 5700 A per sq cm.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 15, 1974
- Accession Number
- ADA002693
Entities
People
- David H. Seib
- Harold M. Stoll
Organizations
- The Aerospace Corporation