Electron Beam Semiconductor Amplifier (L-Band).

Abstract

The goal of the program was to design, develop, fabricate and test exploratory developmental models of a pulsed, L-band, RF amplifier capable of 2 kilowatts peak output power at 1300 MHz with 25 dB power gain and 50 percent efficiency.

Document Details

Document Type
Technical Report
Publication Date
Jul 01, 1974
Accession Number
ADA002699

Entities

People

  • James A. Long

Organizations

  • Watkins-Johnson Company

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Amplifiers
  • Compound Semiconductors
  • Efficiency
  • Electron Beams
  • Electronics
  • Electrons
  • Gain
  • L Band
  • Power Gain
  • Radio Frequency Amplifiers
  • Semiconductors
  • Solid State Electronics

Fields of Study

  • Physics

Readers

  • Electrical Engineering
  • Radar Systems Engineering.

Technology Areas

  • Directed Energy
  • Microelectronics