The Influence of Electron (1.5 MeV) and Proton (5 MeV) Irradiation on the Electrical, Optical, and Photoelectric Characteristics of Gallium Arsenide,
Abstract
The purpose of the present work is the study of the spectrum of radiation defects created by electrons (1.5 MeV) and protons (5 MeV) at temperatures close to 300K, their stability to annealing, and also the influence of an admixture of copper on the spectrum of the levels which develop after irradiation. For the investigation the authors used gallium arsenide of the n- and p-types of conductivity with a carrier concentration of 5 times ten to the 15th power to ten to the 18th power/cc.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 18, 1974
- Accession Number
- ADA002814
Entities
People
- M. A. Krivov
- V. N. Brudnyi
Organizations
- National Air and Space Intelligence Center